elektronische bauelemente ssd15N10 15a, 100v, r ds(on) 110m ? n-ch enhancement mode power mosfet 07-mar-2013 rev. e page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. to-252(d-pack) a c d n o p g e f h k j m b 15N10 ???? ? rohs compliant product a suffix of ?-c? specifies halogen free description the ssd15N10 provide the designer with the best combination of fast switching. the to-252 package is universally preferred for all commercial-industrial surface mount applications. the device is suited for charger, industrial and consumer environment. features ? r ds(on) Q 100m ? @ v gs = 10v ? super high density cell design for extremely low r ds(on) ? exceptional on-resistance and maximum dc current capability marking package information package mpq leader size to-252 2.5k 13? inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v t c =25c 15 a continuous drain current t c =70c i d 13.8 a pulsed drain current 1 i dm 24 a t c =25c 44.6 w power dissipation t a =25c p d 2 w operating junction and st orage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings maximum thermal resistance junction-ambient (pcb mount) 3 r ja 62.5 c / w maximum thermal resistance junction-case r jc 2.8 c / w millimete r millimete r ref. min. max. ref. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 ? ? gate ? ? source ? ? drain date code free datasheet http://
elektronische bauelemente ssd15N10 15a, 100v, r ds(on) 110m ? n-ch enhancement mode power mosfet 07-mar-2013 rev. e page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss 100 - - v v gs =0, i d =250 a gate threshold voltage v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current i dss - - 1 a v ds =80v, v gs =0 static drain-source on-resistance 2 r ds(on) - 100 110 m ? v gs =10v, i d =8a total gate charge 2 q g - 26.2 - gate-source charge q gs - 4.6 - gate-drain (?miller?) change q gd - 5.1 - nc i d =10a v ds =80v v gs =10v turn-on delay time 2 t d(on) - 4.2 - rise time t r - 8.2 - turn-off delay time t d(off) - 35.6 - fall time t f - 9.6 - ns v ds =50v i d = 10a v gs =10v r l =5 ? r g =3.3 ? input capacitance c iss - 1535 - output capacitance c oss - 60 - reverse transfer capacitance c rss - 37 - pf v gs =0 v ds =15v f=1.0mhz gate resistance r g - 2 - ? f=1.0mhz source-drain diode forward on voltage 2 v sd - - 1.2 v i s =8.0a, v gs =0v notes: 1. pulse width limited by maximum junction temperature. 2. pulse test. 3. surface mounted on 1 in 2 copper pad of fr4 board. free datasheet http://
elektronische bauelemente ssd15N10 15a, 100v, r ds(on) 110m ? n-ch enhancement mode power mosfet 07-mar-2013 rev. e page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve free datasheet http://
elektronische bauelemente ssd15N10 15a, 100v, r ds(on) 110m ? n-ch enhancement mode power mosfet 07-mar-2013 rev. e page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve free datasheet http://
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